Method of and apparatus for protecting a switch, such as a mems switch, and to a mems switch including such a protection apparatus

ABSTRACT

A method of and apparatus for protecting a MEMS switch is provided. The method and apparatus improve the integrity of MEMS switches by reducing their vulnerability to current flow through them during switching of the MEMS switch between on and off or vice versa. The protection circuit provides for a parallel path, known as a shunt, around the MEMS component. However, components within the shunt circuit can themselves be removed from the shunt when they are not required. This improves the electrical performance of the shunt when the switch is supposed to be in an off state.

CROSS REFERENCE TO RELATED APPLICATIONS

This patent application claims priority from provisional U.S. patentapplication No. 62/020,156, filed Jul. 2, 2014, entitled, “Method of andApparatus for Protecting a Switch, Such as a MEMS Switch, and to a MEMSSwitch Including Such a Protection Apparatus,” and naming Padraig L.Fitzgerald as inventor [practitioner's file 2906/143], the disclosure ofwhich is incorporated herein, in its entirety, by reference.

TECHNICAL FIELD

This disclosure relates to methods of and apparatus for protecting aMEMS switch during its operation, and to a MEMS switch including such aprotection method and apparatus.

BACKGROUND ART

MEMS switches are gaining popularity as reliable small size switchingalternatives to relays and field effect transistors. MEMS switches areexceedingly small, have a low insertion loss, and a high impedance whenin the open state. However, in general, MEMS switches are only operatedto change state between open and closed or vice versa when there is nocurrent flowing through the switch or no voltage across the switch. Thisis to avoid arcing within the MEMS switch which can damage the materialof the switch contacts. The dimensions of MEMS switches are, as notedabove, very small with the contacts often being only separated by amicron or so when in the open position. Arcing can cause the profile ofthe switch to change in such a way that the switch could becomepermanently conducting, or to damage the contacts such that it becomespermanently open circuit.

SUMMARY OF THE EMBODIMENTS

It would be desirable to facilitate the use of MEMS switches across agreater range of a devices and applications. In order to do this, thepotential issues associated with damage during opening and closing ofthe switch would benefit from being addressed.

This disclosure relates to a method of protecting a switch. Theprotection is implemented during the opening and closing operations ofthe switch. The protection comprises providing a controllable shunt pathin parallel with the switch. The shunt path can be operated to provide acurrent flow path in parallel with the switch during the opening andclosing operations of the switch. Advantageously the shunt pathcomprises at least one solid state switch, such as a transistor, inseries with at least one mechanical switch.

Preferably the switch is a MEMS switch. The MEMS switch may be providedwithin an integrated circuit package. Advantageously the at least onemechanical switch is a further MEMS switch. As a result a physicallysmall combination can still be provided. In use, the at least onemechanical switch can be operated to disconnect the solid state switchfrom the shunt path when it is not required. As a result parasiticcomponents associated with the solid state switch can be removed fromthe circuit, thereby giving rise to better off state performance.

This disclosure also relates to a method of protecting a MEMS switchwhere a shunt path is provided in parallel with the MEMS switch. Theshunt path comprises at least one further MEMS switch. The at least onefurther MEMS switch may be provided in parallel with a further shunt(which may be a passive component or an active component), so as tolimit voltage variation across the at least one further MEMS switch,and/or in association with a current limiting component, such as aresistance, for example in the form of a resistor, a transistor, or acombination of components.

This disclosure further relates to a MEMS switch having a first switchnode and a second switch node. The MEMS switch is provided inassociation with a protection circuit. The protection circuit isarranged to selectively provide a low impedance path between the firstand second switch nodes of the MEMS switch. The protection circuitcomprises a first protection circuit MEMS switch, and components forlimiting a voltage across or current through the first protection MEMSswitch around a switch transition of the first protection circuit MEMSswitch.

In a further aspect of this disclosure, a protection circuit is providedin which one or more inductors are provided to reduce high frequencysignal propagation through a shunt transistor. The inductor(s) and shunttransistor form a controllable shunt path having a high-stop filtercharacteristic. This reduces signal propagation of high frequencysignals through the shunt path.

The protection circuits may be provided on the same substrate or die asthe MEMS switch. Alternatively the protection circuit may be providedpartially or wholly on a further die or substrate, and wire bonds orother interconnection structures may be provided to link the protectioncircuit with the switch.

Active components, such as amplifiers, may be used to temporarily drivethe voltages on either side of one or more switches in the protectioncircuit to substantially the same value so as to reduce switching stresson those switches.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments of this disclosure will now be described, by way of exampleonly, with reference to the accompanying figures, in which:

FIG. 1 is a cross-section through a MEMS switch;

FIG. 2 is a circuit diagram of a MEMS switch in association with aprotection circuit;

FIG. 3 is a timing diagram showing signals for the circuit of FIG. 2during opening and closing operations of the MEMS switch;

FIG. 4 shows a second embodiment of a protection circuit in associationwith a MEMS switch;

FIG. 5 shows timing diagrams for the arrangement of FIG. 4;

FIG. 6 shows a further embodiment of a protection circuit in associationwith a MEMS switch;

FIG. 7 shows a further embodiment of a switching network where one ormore of a plurality of signals can be connected to an output node, aswitching network being associated with a protection circuit;

FIG. 8 shows a plan view of the switching network of FIG. 7 asimplemented within an integrated circuit;

FIG. 9 shows a further embodiment of a switch and protection circuit;

FIG. 10 shows a further embodiment of this disclosure;

FIG. 11 shows a further embodiment of this disclosure;

FIG. 12 shows another embodiment of this disclosure;

FIG. 13 shows a further embodiment using diodes to form a solid stateswitch; and

FIG. 14 shows an embodiment in which an amplifier is used to equalizepotentials on either side of a switch.

DETAILED DESCRIPTION OF SPECIFIC EMBODIMENTS

FIG. 1 is a schematic diagram of an embodiment of a MEMS(micro-electro-mechanical system) switch generally indicated 1. Thisdescription of a MEMS switch is given by way of background only and isnot intended to limit the teachings of this disclosure to the particularMEMS switch configuration. The switch 1 is formed over a substrate 2.The substrate 2 may be a semiconductor, such as silicon. The siliconsubstrate may be a wafer formed by processes such as the Czochralski, CZ, process or the float zone process. The CZ process is less expensiveand gives rise to a silicon substrate which is more physically robustthan that obtained using the float zone process, but float zone deliverssilicon with a higher resistivity which is more suitable for use in highfrequency circuits.

The silicon substrate may optionally be covered by a layer 4 of undopedpolysilicon. The layer 4 of polysilicon acts as a carrier lifetimekiller. This enables the high frequency performance of the CZ silicon tobe improved.

A dielectric layer 6, which may be of silicon oxide (generally SiO₂) isformed over the substrate 2 and the optional polysilicon layer 4. Thedielectric layer 6 may be formed in two phases such that a metal layermay be deposited, masked and etched to form conductors 10, 12 and 14.Then the second phase of deposition of the dielectric 6 may be performedso as to form the structure shown in FIG. 1 in which the conductors 10,12 and 14 are embedded within the dielectric layer 6.

The surface of the dielectric layer 6 has a first switch contact 20provided by a relatively hard wearing conductor formed over a portion ofthe layer 6. The first switch contact 20 is connected to the conductor12 by way of one or more vias 22. Similarly a control electrode 23 maybe formed above the conductor 14 and be electrically connected to it byone or more vias 24.

A support 30 for a switch member 32 is also formed over the dielectriclayer 6. The support 30 comprises a foot region 34 which is depositedabove a selected portion of the layer 6 such that the foot region 34 isdeposited over the conductor 10. The foot region 34 is connected to theconductor 10 by way of one or more vias 36.

In a typical MEMS switch the conductors 10, 12 and 14 may be made of ametal such as aluminum or copper. The vias may be made of aluminum,copper, tungsten or any other suitable metal or conductive material. Thefirst switch contact 20 may be any suitable metal, but rhodium is oftenchosen as it is hard wearing. For ease of processing the controlelectrode may be made of the same material as the first switch contact20 or the foot region 34. The foot region 34 may be made of a metal,such as gold.

The support 30 further comprises at least one upstanding part 40, forexample in the form of a wall or a plurality of towers that extends awayfrom the surface of the dielectric layer 6.

The switch member 32 forms a moveable structure that extends from anuppermost portion of the upstanding part 40. The switch member 32 istypically (but not necessarily) provided as a cantilever which extendsin a first direction, shown in FIG. 1 as direction A, from the support30 towards the first switch contact 20. An end portion 42 of the switchmember 20 extends over the first switch contact 32 and carries adepending contact 44. The upstanding part 40 and the switch member 32may be made of the same material as the foot region 34.

The MEMS structure, in this example, is protected by a cap structure 50which is bonded to the surface of the dielectric layer 6 or othersuitable structure so as to enclose the switch member 32 and the firstswitch contact 20. Suitable bonding techniques are known to the personskilled in the art.

As noted before, the teachings of this disclosure are not limited to usewith any particular MEMS switch design. Thus the teachings are equally,for example, appropriate for use with see-saw (or teeter-totter) switchdesigns.

The switch 1 can be used to replace relays and solid state transistorswitches, such as FET switches. Many practitioners in the field haveadopted a terminology that is used with FETs. Thus the conductor 10 maybe referred to as a source, the conductor 12 may be referred to as adrain, and the conductor 23 forms a gate connected to a gate terminal14. The source and drain may be swapped without affecting the operationof the switch.

In use a drive voltage is applied to the gate 23 from a drive circuitconnected to the gate terminal. The potential difference between thegate 23 and the switch member 32 causes, for example, positive charge onthe surface of the gate 23 to attract negative charge on the lowersurface of the movable switch member 32. This causes a force to beexerted that pulls the switch member 32 towards the substrate 2. Thisforce causes the switch member to bend such that the depending contact44 contacts the first switch contact 20.

In practice, the switch is over driven so as to hold the contact 44relatively firmly against the first switch contact 20.

Such a MEMS switch may have its performance degraded if it is switchedwhilst a voltage exists across it or a current flows through it. Thisproblem has been recognized in the past, and workers in this field havesought to address this by providing a solid state switch in parallelwith the MEMS switch 1. Whilst such solid state switches areadvantageous in protecting the MEMS switch, they may have theundesirable consequence of introducing a relatively large parasiticcapacitance. One of the known advantages of MEMS switches is their highisolation when in the off (i.e. open) switch state. The provision of aparallel semiconductor switch, such as a MOSFET, exhibiting parasiticcapacitance provides a parasitic signal path around the switch whichdegrades its off state performance. The inventor realized that the offstate performance could be restored by providing further means, forexample further MEMS switches, which could be used to switch or moreaccurately disconnect the semiconductor switch from the terminals of theMEMS switch 1 when it was not needed to provide switch protection. Suchan arrangement is schematically shown in FIG. 2, where the main switchcomponent, designated 1 and described hereinbefore with respect to FIG.1, provides a controllable switch path between first and second switchnodes 10 and 12 respectively. However, the switch 1 is furtherassociated with a protection circuit 70 comprising a first protectioncircuit MEMS switch 72, a second protection circuit MEMS switch 74 andsemi-conductor switch 76. The first protection circuit MEMS switch 72has a first terminal 82 connected to the first switch node 10, and asecond terminal 84 connected to a current flow node of the semiconductorswitch 76. Where the semiconductor switch 76 is comprised of one or moreFET devices, then the current flow terminal may be a drain or a sourceof the semiconductor switch. The first protection circuit MEMS switch 72may, as shown in FIG. 2, have a shunt resistance 85 in parallel with it.The shunt resistance 85 may be a large value resistor in order toprovide a small current path across the first protection circuit switch72 in order that the voltage at either of its nodes or terminals 82 and84 tends to equalize. The large resistor, for example 1 Mega-ohm asshown here, means that the parasitic leakage to the semiconductor switch76 is very small. However, depending on the bandwidth and theperformance of the circuits associated with the MEMS switch 1, a muchsmaller value resistor 85 may be provided.

Similarly, the second protection circuit MEMS switch 74 has a firstterminal 92 connected to the second switch terminal 12, and a secondterminal 94 connected to a second current flow terminal of thesemiconductor switch 76 and may have a resistor 95 in parallel with it.Thus, when both the first and second protection circuit MEMS switches 72and 74 are in a conducting state, and the semiconductor switch 76 is ina low impedance state then the protection circuit 70 forms a shuntbetween the switch nodes 10 and 12, thereby allowing the main switch 1to be operated such that a signal can be applied to or removed from itsgate 23 (FIG. 1) in order to cause the switch member 32 to move. In avariation the resistors 85 and 95 may be replaced by respective resistorand series transistor combinations. This allows the parallel resistanceto be variable. If the resistors are connected to the switch nodes 10and 12 then the parasitic components associated with the additionaltransistors are largely hidden from the nodes 10 and 12.

FIG. 3 shows switch control signals labelled A, B and C which areapplied to the gates of the first switch 1 and of the first and secondprotection circuit switches 72 and 74, and the gate or other controlterminal of the semiconductor switch 76. As shown in FIG. 3, it isdesired to switch the switch 1 on at time S_(ON) and switch it off attime S_(OFF). In advance of time S_(ON), switch control signal C isasserted first. This causes the first and second protection circuit MEMSswitches to close, thereby introducing the semiconductor switch 76 intothe shunt path around the switch 1. As the semiconductor switch 76 is ina non-conducting state, no current flow should occur through the firstand second protection circuit MEMS switches at this time andconsequently they undergo no switching damage. Furthermore, theprovision of the high impedance shunting resistors 85 means that thereis no or very little parasitic capacitance to be charged at this time.Next the transistor switch 76 is turned on by asserting the signal B.Thus the shunt path connects nodes 10 and 12. After a suitable guardtime signal A may be asserted in order to close the switch 1, then thesignals B and C can be removed. As shown in FIG. 3 signal B is removedbefore signal C is de-asserted but other switching schemes are possible.When it is desired to switch the switch 1 off at time S_(OFF), theprocess is repeated with signal C being asserted to close the first andsecond protection circuits MEMS switches prior to switching thesemi-conductor switch 76 into a conducting state. Once the shunt hasbeen reestablished, then the signal A can be removed thereby allowingswitch 1 to open. Then the transistor 76 is made high impedance byremoving signal B, and once current flow has ceased the signal C isremoved thereby opening the first and second protection circuit MEMSswitches 72 and 74, respectively. The switch signals A, B and C may beprovided by a switch controller 98, as shown in FIG. 2, in response to a“switch state” signal.

FIG. 4 shows a variation on the arrangement shown in FIG. 2. The firstand second protection circuit MEMS switches 72 and 74 are still providedas described hereinbefore, and connected to nodes 10 and 12,respectively, but each protection circuit MEMS switch is now in serieswith a respective solid state switch 102 and 100 which connect to acommon node 110. The switches 102 and 100 may form or be part of asemiconductor switch array. The semiconductor switches 100 and 102 canbe FET based switches as described hereinbefore. As before, the firstand second protection circuit MEMS switches 72 and 74 may be providedwith respective shunt resistors 85. The shunt resistors may be a largevalue, as indicated in FIG. 4.

FIG. 5 shows a drive signal diagram for the arrangement shown in FIG. 4.It can be seen that the signals A, B and C can be asserted andde-asserted as previously described with respect to FIG. 3.

FIG. 6 shows a further embodiment of this disclosure in which the MEMSswitch 1 extends between first and second switch terminals 10 and 12 ashereinbefore described. However, now only a single MEMS protectioncircuit switch 130 is provided in the protection circuit 70. The switch130 may be similar or identical to the switch 1 or may be a smallerswitch as it is relatively common to provide MEMS switches 1 withmultiple switch contacts in order to keep the on state resistance low.The MEMS protection circuit switch 130 is connected in series withresistors 132 and 134 between the first and second switch nodes 10 and12. The resistor values 132 and 134 need to be selected, based on thedesigner's knowledge of the voltage occurring between the nodes 10 and12, in order to balance the need to form a low impedance shunt pathusing the components 130, 132 and 134 with avoiding transients at theswitch 130 when it is operated. However, the resistors 132 and 134 act,together with parasitic capacitances associated with the switch 130, oractual capacitances which may be formed around it to dampen and reducethe magnitude of switching currents. The control scheme for thisarrangement is similar to that described with respect to FIG. 3, exceptnow signal B is no longer provided as there is no semi-conductor switch.Thus a control signal for the shunt switch is asserted in advance ofchanging the switching state of the main switch 1, and de-asserted afteroperating the switch 1.

The arrangement described herein can be used with multiple switches.FIG. 7 represents a situation in which two MEMS switches representingmain switches of the type described hereinbefore with respect to FIG. 1are designated 150 and 170. Each of the switches 150 and 170 can beopened and closed in response to respective switch control signals G1and G2 provided to the gates of the first and second MEMS switches 150and 170, respectively. The first of these switches 150 extends between afirst input terminal designated T1 and an output terminal designated T3.The second switch 170 extends between a second input terminal designatedT2 and the output terminal designated T3. It should be noted that any ofthese terminals might not be explicit terminals, and might merelyrepresent circuit nodes, and any terminal could be swapped between inputand output, or be bidirectional. T1 is connected to a first resistor 152which is in parallel with a first protection MEMS switch 154 which inturn connect to a circuit node 156. A similar resistor 172 and switch174 are provided in association with the second switch 170 and thesecond terminal T2. The resistor 172 and M EMS switch 174 form a pathextending between the second terminal and a node 176. Furthermore thethird terminal T3 is, in this example, connected to a further resistor182 and a third protection MEMS switch 184. The resistor 182 and MEMSswitch 164 form a path extending between the third terminal and a node186. A first transistor 158 is connected between the nodes 156 and 186.A second transistor 178 is connected between the nodes 176 and 186. Thetransistor 158 and switches 154 and 184 can be controlled to provide ashunt path around the switch 150. Similarly the transistor 178 andswitches 174 and 184 provide a controllable shunt path around the switch170.

It might be thought that the resistors 152, 172 and 182 would have to belarge value components as described hereinbefore, but this may not bethe case. The resistors 152, 172 and 182 may be selected as terminatingcomponents in order to provide a suitable terminating impedance withinan RF transmission line or other signal path. This could be achieved byproviding one or more further transistors (not shown) to selectivelyconnect nodes 156, 176 or 186 to a ground plane or signal line. Thusalthough the terminating impedance would vary depending on whether theswitches are open or closed, it would not vary so substantially comparedto if the resistors were not provided. Thus potential issues of signalreflection can be mitigated at the same time by providing signaltermination. The operation of such additional transistors would need tobe correctly phased to that of the protection switches and transistors158 and 178. The resistors also allow parasitic capacitances todischarge. A plan view of the layout of such an arrangement as shown inFIG. 7 is shown in FIG. 8, although the components 182 and 184 have beenomitted in this configuration.

It is further possible to provide an active component in order to drivethe voltage across the main switch 1 or each protection switch in orderto reduce the voltage difference across the switches. FIG. 9 shows amodification to the arrangement shown in FIG. 6 where an amplifier 190is arranged to force the voltage across a switch 130 to a low value.This arrangement is based on the implicit knowledge that node 10represents an input and node 12 represents an output. Active circuits,such the amplifier 190 could be provided in association with other onesof the embodiments. Thus, active circuits could be arranged to drive thevoltage at node 12 to match that at node 10, and node 94 to match thatat node 12 of the arrangement as shown in FIG. 2.

FIG. 10 shows a further embodiment in which a semiconductor switch 200,shown here as a FET is connected in parallel with the switch 1, but hasinductors 201 and 202 in series with it. The inductors 201 and 202 allowthe transistor to provide a low impedance current flow path for DC andlow frequency components whilst blocking the propagation of highfrequency signals. This allows the transistor to equalize the voltageacross switch 1, or at least do most of the work, before the MEMS switch1 is operated. Optionally a second MEMS switch 130 may be provided inparallel with the switch 1. It can act as a further protection switchsuch that it is always closed when the switch 1 is switched between openand closed. This protects the contacts of switch 1 from damage, so thatit keeps a low on resistance. Indeed in some circumstances it may beacceptable just to provide one or more protection MEMS switches 130 inparallel with the switch 1 such that one or more of the switches 130 areclosed when switch 1 is operated. This keeps the contacts of switch 1 ingood condition such that they provide a low on resistance. The or eachadditional switch 130 can also provide an additional signal path whenswitch 1 is closed. The MEMS switches 1 and 130 may be provided in anintegrated circuit. The inductors 201 and 202, and the transistor 200may be provided on chip or off chip.

FIG. 11 shows a further embodiment, which is based on the embodiment ofFIG. 2 and where the resistors 85 and 95 have been omitted. Thisprovides a simplified circuit.

FIG. 12 shows a further variation, based on FIGS. 2 and 11, whereamplifiers and/or voltage followers 220 and 222 have been introduced inparallel with the protection circuit MEMS switches 72 and 74respectively. The amplifiers/voltage followers only need to be poweredup just prior to closing the switches 72 and 74 (whilst transistor 76 isoff). Consequently they only drive current to charge any parasiticcapacitances associated with the switches 72 and 74, and can be made asvery low power devices. The linearity, frequency response and offset ofthe amplifiers 220 and 222 is not particularly critical, and hence theyneed not consume much space or power.

FIG. 13 shows a further embodiment based on FIG. 4 where the protectionswitch 72 is interposed between node 10 and a circuit 300. Similarlyswitch 74 is interposed between node 12 and a circuit 302. The switches72 and 74 may have resistors 85 and 95 in parallel with them, and thesemay be of relatively high values.

The circuits 300 and 302 are identical, and hence only the circuit 300will be described in detail. A terminal of the protection switch 72 isconnected to a node 310 which represents the cathode of a first diode312 and the anode of a second diode 314. The anode of the first diode312 is connected to a switch 316 operable to connect the anode to apositive supply V_(DD) or to a local ground. The cathode of the seconddiode 314 is connected to a switch 318 operable to connect it to anegative supply V_(SS) or local ground.

In use, both switches 72 and 74 are normally open, and the switches 316and 318 connect to V_(DD) and V_(SS), respectively. When it is desiredto open or close the switch 1, a switching sequence is commenced inwhich switches 72 and 74 are closed. Then the switches 316 and 318 areoperated to connect their respective diodes to the local ground. Thispulls node 310 to ground, or close to ground. The same sequence happensin circuit 302, so the voltage difference across the switch 1 is reducedto zero, or close to zero, volts. The switch 1 can then be opened orclosed as appropriate. Once this has happened switches 316 and 318 arereturned to their initial conditions so as to connect the diodes in areverse biased configuration between V_(DD) and V_(SS). Then switches 72and 74 are opened.

FIG. 14 shows a variation that may be used in circumstances where thecurrent passing through the switch can be supplied by a voltage follower330. The voltage follower has an input connected to node 10 and anoutput connected to node 12, optionally by way of a switch 332. Thevoltage follower has an output stage that can be disabled, so as toplace it in a high impedance state. In use and if switch 332 isprovided, then normally switch 332 is open and the voltage follower isdisabled, with its output high impedance. In a switching sequence,switch 332 can be closed so as to connect the output of the voltagefollower to the node 12. The voltage follower can then be enabled, suchthat it forces the voltage at node 12 to match the voltage at node 10.Then the switch 1 can be opened or closed. Then the voltage follower canbe disabled, and finally switch 332 opened.

A MEMS switch 1, and its protection circuit 70, are suitable forproviding within integrated circuit packages. Several MEMS switches, andtheir associated protection circuits, may be provided within a singleswitch package configuration, either with or without additionalelectronics. The MEMS switches may be formed above a die which may bethe same as the die carrying other components within the integratedcircuit package, or may be a separate die in order to provide enhancedisolation. Where a separate die is chosen it need not be a semiconductorand may be another substrate, for example glass, chosen for its superiorhigh impedance properties. Multiple dies may be provided within a singleIC package as known to the person skilled in the art. In furthervariations, the additional protection switches or the shuntingtransistor need not be formed in the same package as the MEMS switch 1.However, it is advantageous that the MEMS switches 72 and 74 areprovided in the same package at the MEMS switch 1, although thetransistor 76 of FIG. 2, for example, could be provided as a separatecomponent if so desired. Suitable low resistance semi-conductor switchesare commercially available, for example as component ADG1401 from AnalogDevices. Such a switch has an on resistance of around 1 ohm.

The embodiments described herein have utility in many switchingapplications, where signal integrity and good isolation are required.MEMS switches can exhibit long operating lives and undergo millions ofswitch operations. Embodiments of the invention may be used, withoutlimitation, in communication, monitoring and control systems.

Claims herein may be presented herein in single dependency format.However it is to be understood that each claim may multiply depend onany preceding claim of the same type provided that such an arrangementis not technically infeasible.

The embodiments of the invention described above are intended to bemerely exemplary; numerous variations and modifications will be apparentto those skilled in the art. All such variations and modifications areintended to be within the scope of the present invention as defined inany appended claims.

What is claimed: 1.-11. (canceled)
 12. A protectedmicroelectromechanical systems (MEMS) device, comprising: a MEMS switchhaving a first switch node and a second switch node; a protectioncircuit comprising a diode having a first electrode connected to thefirst switch node and a second electrode connected to a voltage node,the protection circuit configured to connect the first switch node tothe voltage node in response to a switch transition of the MEMS switch.13. The protected MEMS device of claim 12, wherein the voltage node is aground node.
 14. The protected MEMS device of claim 12, furthercomprising a shunt component connected between the first electrode ofthe diode and the first switch node.
 15. The protected MEMS device ofclaim 14, wherein the shunt component comprises a resistor.
 16. Theprotected MEMS device of claim 14, wherein the shunt component comprisesa protection switch connected between the first electrode of the diodeand the first switch node of the MEMS switch, wherein the protectionswitch is configured to electrically connect the first electrode of thediode and the first switch node in response to a switch transition ofthe MEMS switch.
 17. The protected MEMS device of claim 16, wherein theshunt component further comprises a resistor in parallel with theprotection switch.
 18. The protected MEMS device of claim 12, furthercomprising a second switch connected between the second electrode andthe voltage node, wherein the second switch is configured toelectrically connect the second electrode and the voltage node when theMEMS switch is switching between open and closed.
 19. The protected MEMSdevice of claim 12, wherein the diode is a first diode, the firstelectrode is an anode of the first diode, the second electrode is acathode of the first diode, and the protection circuit further comprisesa second diode having a cathode connected to the first switch node andan anode connected to the voltage node.
 20. The protected MEMS device ofclaim 19, wherein the protection circuit is a first protection circuit,and the protected MEMS device further comprises a second protectioncircuit configured to connect the second switch node to the voltage nodein response to a switch transition of the MEMS switch, wherein thesecond protection circuit comprises: a third diode having a cathodeconnected to the voltage node and an anode connected to the secondswitch node; a fourth diode having a cathode connected to the secondswitch node and an anode connected to the voltage node.
 21. A protectedmicroelectromechanical systems (MEMS) device, comprising: a MEMS switch;and a first diode having a cathode and an anode, a second diode having acathode and an anode, wherein a terminal of the MEMS switch is connectedto the anode of the first diode and the cathode of the second diode, andwherein the cathode of the first diode and the anode of the second diodeare configured to be connected to ground in response to a switchtransition of the MEMS switch.
 22. The protected MEMS device of claim21, further comprising a first switch connected between the cathode ofthe first diode and ground, and a second switch connected between theanode of the second diode and ground.
 23. The protected MEMS device ofclaim 22, further comprising a controller configured to control thefirst and second switches such that the cathode of the first diode andthe anode of the second diode are connected to ground in response to aswitch transition of the MEMS switch.
 24. The protected MEMS device ofclaim 23, wherein the first switch is a toggle switch that connects toeither ground or a first voltage node, the second switch is a toggleswitch that connects to either ground or a second voltage node, and thecontroller is configured to control the first and second switches suchthat the cathode of the first diode is connected to the first voltagenode and the anode of the second diode is connected to the secondvoltage node in response to the MEMS switch being outside of a switchtransition.
 25. The protected MEMS device of claim 21, furthercomprising a shunt component coupled between the terminal of the MEMSswitch and the cathode of the first diode.
 26. The protected MEMS deviceof claim 25, wherein the shunt component comprises a resistor.
 27. Theprotected MEMS device of claim 25, wherein the shunt component comprisesa protection switch connected between the terminal of the MEMS switchand the cathode of the first diode, wherein the protection switch isconfigured to electrically connect the terminal and the cathode of thefirst diode in response to a switch transition of the MEMS switch. 28.The protected MEMS device of claim 27, wherein the shunt componentfurther comprises a resistor in parallel with the protection switch. 29.A method of protecting a microelectromechanical systems (MEMS) switch,comprising: connecting a cathode of a diode to ground in response to aswitch transition of the MEMS switch, wherein an anode of the diode isconnected to a terminal of the MEMS switch.
 30. The method of claim 29,further comprising: connecting the cathode of the diode to a voltagenode when the MEMS switch is not undergoing a switch transition.
 31. Themethod of claim 30, wherein the diode is a first diode, the methodfurther comprising: connecting the terminal of the MEMS switch to acathode of a second diode; and connecting an anode of the second diodeto ground in response to a switch transition of the MEMS switch.